hzm6.8zwa silicon epitaxial planar zener diode for surge absorb ade-208-613a(z) rev 1 jan. 1999 features hzm6.8zwa has two devices, and can absorb external + and -surge. low capacitance (c=25pf max) and can protect esd of signal line. mpak package is suitable for high density surface mounting and high speed assembly. ordering information type no. laser mark package code hzm6.8zwa 68z mpak outline 1 cathode 2 cathode 3 anode (top view) 2 1 3 absolute maximum ratings (ta = 25 c) item symbol value unit power dissipation pd *1 200 mw junction temperature tj 150 c storage temperature tstg -55 to +150 c note 1. two device total, see fig.2.
hzm6.8zwa 2 electrical characteristics (ta = 25 c) *1 item symbol min typ max unit test condition zener voltage v z 6.47 ? 7.00 v i z = 5 ma, 40ms pulse reverse current i r ?? 2 m av r = 3.5v capacitance c ?? 25 pf v r = 0v, f = 1 mhz dynamic resistance r d ?? 30 w i z = 5 ma esd-capability *2 ? 20 ?? kv c =150pf, r = 330 w , both forward and reverse direction 10 pulse notes 1. per one device. 2. failure criterion ; ir > 2 m a at vr = 3.5v.
hzm6.8zwa 3 main characteristic fig.2 power dissipation vs. ambient temperature ambient temperature ta ( c) power dissipation p d (mw) fig.1 zener current vs.zener voltage zener voltage vz (v) zener current iz (a) fig.3 surge reverse power ratings t p rsm ta = 25? nonrepetitive time t (s) nonrepetitive surge reverses power p (w) rsm 0 2 10 10 10 10 8 10 10 6 4 -6 -5 -4 -3 -2 250 200 150 100 50 200 150 100 50 0 0 1.0mm 0.8mm printed circuit board 25 62 1.6t mm material: glass epoxy resin+cu foil cu foil 10 10 1.0 10 10 1.0 10 10 10 10 10 4 3 2 -5 -4 -3 -2 -1
hzm6.8zwa 4 main characteristic fig.4 transient thermal impedance time t (s) transient thermal impedance z (?/w) th 1.0 10 10 10 10 4 3 2 10 10 10 10 10 1.0 -2 -1 2 3
hzm6.8zwa 5 package dimensions unit : mm 0.16 0 ?0.10 + 0.10 ?0.06 0.4 + 0.10 ?0.05 0.95 0.95 1.9 2.8 + 0.3 ?0.1 2.8 + 0.2 ?0.6 0.65 + 0.1 ?0.3 1.5 0.65 + 0.1 ?0.3 1.1 + 0.2 ?0.1 0.3 laser mark 21 3
hitachi code jedec code eiaj code weight (g) mpak(1) sc-59a 0.011
1 cathode 2 cathode 3 anode 68z cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products.
hzm6.8zwa 6 hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca 94005-1897 tel: <1> (800) 285-1601 fax: <1> (303) 297-0447 for further information write to:
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